Infineon Drops Q-DPAK SiC MOSFETs for Smaller, Cooler Designs
Source： eepower
High-performance industrial systems demand more from power electronics, especially in compact designs. As applications like electric vehicle chargers, solar inverters, and UPS systems push for higher efficiency and thermal control, next-generation silicon carbide (SiC) devices play a critical role.
Infineon’s new 1200 V CoolSiC G2 MOSFETs in a top-side-cooled Q-DPAK package are designed to meet that demand. By improving on-resistance, reducing thermal bottlenecks, and simplifying integration, these devices give engineers the tools to increase system efficiency and power density without compromising reliability.
Lower Switching Losses and Better Thermal Performance
The second-generation CoolSiC technology brings notable improvements over its predecessor. Devices with equivalent RDS(on) values now exhibit up to 25% lower switching losses, helping boost system-level efficiency by as much as 0.1%. In high-power designs where energy savings compound over time, even a fraction of a percent can make a real difference.
Infineon’s XT die attach process also reduces thermal resistance by more than 15%. Combined with improved packaging, this results in an 11% drop in device temperature under load compared to the G1 family. The devices are rated for overload operation up to a junction temperature of 200°C and are engineered to resist parasitic turn-on events.
Flexible Top-Side-Cooled Q-DPAK Platform
The Q-DPAK package uses a top-side cooling approach to allow heat to dissipate directly from the surface of the MOSFET to the heatsink. This design improves the thermal transfer of the MOSFET compared to traditional bottom-side cooling, which relies on heat moving through the PCB. For compact power systems where space and temperature control are critical, this layout simplifies thermal design and supports higher power densities.
The Q-DPAK is part of Infineon’s larger X-DPAK platform and comes in single-switch and dual half-bridge versions. All variants share a consistent 2.3 mm height, making it easier for engineers to combine different parts under the same heatsink and simplify thermal design.
Aside from better heat handling, the Q-DPAK also cuts down on parasitic inductance. That’s important when switching at high speeds since lower inductance helps reduce voltage spikes and interference. Its small footprint and surface-mount design make it a good fit for automated production lines, helping manufacturers save space and keep costs down.
Built for High-Density, High-Efficiency Platforms
CoolSiC trench MOSFETs are built for hard and soft-switching topologies, including PFC stages, LLC converters, and full-bridge inverters. With voltage ratings spanning from 400 V to 2000 V and RDS(on) options from 4 mΩ to 78 mΩ in the 1200 V family, engineers can tailor their designs for performance, cost, or thermal priorities.
Pinout diagram for the CoolSiC MOSFET. Images used courtesy of Infineon
These MOSFETs have practical features to help simplify high-performance power designs. Including Kelvin-source pins improves gate signal accuracy, while the built-in body diode handles hard switching without added components. Because they’re unipolar, they deliver consistent performance even as temperatures rise or fall, especially useful in systems that run at partial load, like solar inverters or battery storage setups.
The G2 family also pairs well with Infineon’s EiceDRIVER isolated gate driver ICs. Built using coreless transformer technology, these drivers are optimized for SiC's fast-switching behavior and offer the galvanic isolation needed in high-voltage environments.
Infineon’s 1200 V CoolSiC G2 MOSFETs in the Q-DPAK package give engineers a practical option for building compact, high-performance power systems. With stronger switching performance, better thermal handling, and a flexible packaging approach, the new devices are well-suited for tough design challenges in electric vehicle charging, industrial drives, and renewable energy equipment.